Technische Details PSMN4R4-30MLC,115 Nexperia
Description: MOSFET N-CH 30V 70A LFPAK33, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 69W (Tc), Rds On (Max) @ Id, Vgs: 4.65mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN4R4-30MLC,115 nach Preis ab 0.34 EUR bis 1 EUR
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PSMN4R4-30MLC,115 | Hersteller : Nexperia |
 Trans MOSFET N-CH 30V 70A 8-Pin LFPAK EP T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R4-30MLC,115 | Hersteller : Nexperia |
MOSFETs PSMN4R4-30MLC/SOT1210/mLFPAK |
auf Bestellung 1246 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R4-30MLC,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 70A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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PSMN4R4-30MLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 4.65mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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PSMN4R4-30MLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 4.65mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |