| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.15 EUR |
| 10+ | 4.13 EUR |
| 100+ | 3.39 EUR |
| 500+ | 3.03 EUR |
| 1000+ | 2.49 EUR |
| 2500+ | 2.48 EUR |
| 5000+ | 2.4 EUR |
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Technische Details PSMN4R6-60PS,127 Nexperia
Description: MOSFET N-CH 60V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V.
Weitere Produktangebote PSMN4R6-60PS,127 nach Preis ab 2.32 EUR bis 5.9 EUR
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PSMN4R6-60PS,127 | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 100A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V |
auf Bestellung 7704 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN4R6-60PS,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
auf Bestellung 7704 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.9 EUR |
| 10+ | 4.05 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.44 EUR |
| 1000+ | 2.32 EUR |