PSMN5R0-100ES,127 Nexperia

Description: MOSFET N-CH 100V 120A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 338W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA.