
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.00 EUR |
10+ | 0.86 EUR |
100+ | 0.60 EUR |
500+ | 0.50 EUR |
1000+ | 0.42 EUR |
1500+ | 0.36 EUR |
3000+ | 0.34 EUR |
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Technische Details PSMN5R4-25YLDX Nexperia
Description: MOSFET N-CH 25V 70A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V.
Weitere Produktangebote PSMN5R4-25YLDX nach Preis ab 0.66 EUR bis 1.55 EUR
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PSMN5R4-25YLDX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V |
auf Bestellung 594 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN5R4-25YLDX | Hersteller : NEXPERIA |
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PSMN5R4-25YLDX | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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PSMN5R4-25YLDX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V |
Produkt ist nicht verfügbar |