PSMN5R8-30LL,115 NXP Semiconductors

Description: MOSFET N-CH 30V 40A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: 8-DFN3333 (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1316 pF @ 15 V.