PSMN6R0-25YLB,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 25V 73A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 12 V
auf Bestellung 1499 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 1.72 EUR |
| 18+ | 1.47 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.85 EUR |
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Technische Details PSMN6R0-25YLB,115 Nexperia USA Inc.
Description: MOSFET N-CH 25V 73A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 12 V.
Weitere Produktangebote PSMN6R0-25YLB,115 nach Preis ab 1.42 EUR bis 2.76 EUR
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PSMN6R0-25YLB,115 | Hersteller : Nexperia |
MOSFET PSMN6R0-25YLB/SOT669/LFPAK |
auf Bestellung 165 Stücke: Lieferzeit 14-28 Tag (e) |
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| PSMN6R0-25YLB,115 | Hersteller : NEXPERIA |
PSMN6R0-25YLB.115 SMD N channel transistors |
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PSMN6R0-25YLB,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 73A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 12 V |
Produkt ist nicht verfügbar |