| Anzahl | Preis |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.38 EUR |
| 1500+ | 0.32 EUR |
| 3000+ | 0.26 EUR |
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Technische Details PSMN6R0-30YLDX Nexperia
Description: MOSFET N-CH 30V 66A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN6R0-30YLDX nach Preis ab 0.84 EUR bis 2.04 EUR
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PSMN6R0-30YLDX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 66A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
auf Bestellung 1495 Stücke: Lieferzeit 10-14 Tag (e) |
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