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PSMN6R1-40HLX

PSMN6R1-40HLX Nexperia

PSMN6R1-40HL.pdf
Hersteller: Nexperia
MOSFETs SOT205 2NCH 40V 40A
auf Bestellung 13542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.33 EUR
10+2.13 EUR
100+1.43 EUR
500+1.15 EUR
1000+1.03 EUR
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Technische Details PSMN6R1-40HLX Nexperia

Description: MOSFET 2N-CH 40V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 64W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V, Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D.

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PSMN6R1-40HLX PSMN6R1-40HLX Hersteller : Nexperia USA Inc. PSMN6R1-40HL.pdf Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.26 EUR
100+1.61 EUR
500+1.32 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PSMN6R1-40HLX PSMN6R1-40HLX Hersteller : Nexperia USA Inc. PSMN6R1-40HL.pdf Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
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Im Einkaufswagen  Stück im Wert von  UAH