PSMN6R5-80PS,127 NEXPERIA
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 470A
Power dissipation: 210W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details PSMN6R5-80PS,127 NEXPERIA
Description: MOSFET N-CH 80V 100A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 210W (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote PSMN6R5-80PS,127 nach Preis ab 4.49 EUR bis 6.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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PSMN6R5-80PS,127 | Nexperia |
MOSFETs PSMN6R5-80PS/SOT78/SIL3P |
auf Bestellung 1815 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN6R5-80PS,127 |
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Hersteller: Nexperia
MOSFETs PSMN6R5-80PS/SOT78/SIL3P
MOSFETs PSMN6R5-80PS/SOT78/SIL3P
auf Bestellung 1815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.89 EUR |
| 10+ | 4.49 EUR |