PSMN6R7-40MSDX Nexperia
Hersteller: NexperiaMOSFETs N-channel 40 V, 6.7 mohm, standard level MOSFET in LFPAK33 using NextPower-S3 technology
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.61 EUR |
| 10+ | 1.16 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.57 EUR |
| 1500+ | 0.54 EUR |
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Technische Details PSMN6R7-40MSDX Nexperia
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A, Case: LFPAK33; SOT1210, Kind of channel: enhancement, Technology: NextPowerS3, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 22nC, On-state resistance: 13mΩ, Drain current: 50A, Gate-source voltage: ±20V, Drain-source voltage: 40V, Power dissipation: 65W, Pulsed drain current: 282A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PSMN6R7-40MSDX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| PSMN6R7-40MSDX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 50A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| PSMN6R7-40MSDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A Case: LFPAK33; SOT1210 Kind of channel: enhancement Technology: NextPowerS3 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 22nC On-state resistance: 13mΩ Drain current: 50A Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 65W Pulsed drain current: 282A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN6R7-40MSDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V LFPAK33 |
Produkt ist nicht verfügbar |
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| PSMN6R7-40MSDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A Case: LFPAK33; SOT1210 Kind of channel: enhancement Technology: NextPowerS3 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 22nC On-state resistance: 13mΩ Drain current: 50A Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 65W Pulsed drain current: 282A |
Produkt ist nicht verfügbar |