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PSMN7R0-100XS,127

PSMN7R0-100XS,127 NXP Semiconductors


734704855370536psmn7r0-100xs.pdf Hersteller: NXP Semiconductors
Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220F Rail
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Technische Details PSMN7R0-100XS,127 NXP Semiconductors

Description: MOSFET N-CH 100V 55A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V, Power Dissipation (Max): 57.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220F, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V.

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PSMN7R0-100XS,127 PSMN7R0-100XS,127 Hersteller : NXP USA Inc. PSMN7R0-100XS.pdf Description: MOSFET N-CH 100V 55A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Power Dissipation (Max): 57.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V
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