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Technische Details PSMN7R5-30YLDX Nexperia
Description: MOSFET N-CH 30V 51A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 34W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN7R5-30YLDX nach Preis ab 0.38 EUR bis 2.31 EUR
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PSMN7R5-30YLDX | Nexperia |
 Trans MOSFET N-CH 30V 51A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 16500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN7R5-30YLDX | Nexperia |
Trans MOSFET N-CH 30V 51A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN7R5-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 51A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN7R5-30YLDX | Nexperia |
MOSFETs N-channel 60 V, 7.5 mohm logic level MOSFET in LFPAK56 |
auf Bestellung 7294 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN7R5-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 51A LFPAK56 Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V |
auf Bestellung 13623 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN7R5-30YLDX |
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Hersteller: Nexperia
Trans MOSFET N-CH 30V 51A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 30V 51A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 16500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.38 EUR |
| PSMN7R5-30YLDX |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 51A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 30V 51A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 353+ | 0.49 EUR |
| PSMN7R5-30YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 51A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 51A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.63 EUR |
| 3000+ | 0.58 EUR |
| 4500+ | 0.56 EUR |
| 7500+ | 0.52 EUR |
| 10500+ | 0.51 EUR |
| PSMN7R5-30YLDX |
|
Hersteller: Nexperia
MOSFETs N-channel 60 V, 7.5 mohm logic level MOSFET in LFPAK56
MOSFETs N-channel 60 V, 7.5 mohm logic level MOSFET in LFPAK56
auf Bestellung 7294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.07 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.6 EUR |
| 250+ | 0.57 EUR |
| 1000+ | 0.49 EUR |
| 1500+ | 0.43 EUR |
| PSMN7R5-30YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 51A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Description: MOSFET N-CH 30V 51A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
auf Bestellung 13623 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 15+ | 1.44 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |