PSMN8R5-100ESFQ NXP Semiconductors

Description: NEXPERIA PSMN8R5 - NEXTPOWER 100, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 183W (Ta), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 97A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: I2PAK.