| Anzahl | Privatkunde |
|---|---|
| 213+ | 3.07 EUR |
| 500+ | 2.73 EUR |
| 1000+ | 2.45 EUR |
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Technische Details PSMN8R5-100ESFQ Nexperia
Description: NEXPERIA PSMN8R5 - NEXTPOWER 100, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 183W (Ta), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 97A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: I2PAK.
Weitere Produktangebote PSMN8R5-100ESFQ nach Preis ab 2.45 EUR bis 3.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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PSMN8R5-100ESFQ | Nexperia |
 Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN8R5-100ESFQ | NXP Semiconductors |
Description: NEXPERIA PSMN8R5 - NEXTPOWER 100 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 183W (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 97A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Supplier Device Package: I2PAK |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN8R5-100ESFQ | NXP Semiconductors |
PSMN8R5-100ESFQ |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PSMN8R5-100ESFQ |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) I2PAK Rail
Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 213+ | 3.07 EUR |
| 500+ | 2.73 EUR |
| 1000+ | 2.45 EUR |
| PSMN8R5-100ESFQ |
|
Hersteller: NXP Semiconductors
Description: NEXPERIA PSMN8R5 - NEXTPOWER 100
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 183W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: I2PAK
Description: NEXPERIA PSMN8R5 - NEXTPOWER 100
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 183W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: I2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 153+ | 3.55 EUR |
| PSMN8R5-100ESFQ |
|
Hersteller: NXP Semiconductors
PSMN8R5-100ESFQ
PSMN8R5-100ESFQ
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 192+ | 3.42 EUR |
| 500+ | 3.02 EUR |
| 1000+ | 2.73 EUR |