auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 213+ | 2.52 EUR |
| 500+ | 2.19 EUR |
| 1000+ | 1.94 EUR |
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Technische Details PSMN8R5-100ESFQ Nexperia
Description: NEXPERIA PSMN8R5 - NEXTPOWER 100, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Ta), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V, Power Dissipation (Max): 183W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V.
Weitere Produktangebote PSMN8R5-100ESFQ nach Preis ab 1.94 EUR bis 2.98 EUR
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PSMN8R5-100ESFQ | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN8R5-100ESFQ | Hersteller : NXP Semiconductors |
Description: NEXPERIA PSMN8R5 - NEXTPOWER 100 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V Power Dissipation (Max): 183W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN8R5-100ESFQ | Hersteller : NXP Semiconductors |
PSMN8R5-100ESFQ |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN8R5-100ESFQ | Hersteller : Nexperia |
MOSFET PSMN8R5-100ESF SOT226/I2PAK |
Produkt ist nicht verfügbar |