PSMN8R5-100ESFQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CHANNEL 100V 97A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 358+ | 1.36 EUR |
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Technische Details PSMN8R5-100ESFQ Nexperia USA Inc.
Description: MOSFET N-CHANNEL 100V 97A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V, Power Dissipation (Max): 183W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V.
Weitere Produktangebote PSMN8R5-100ESFQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| PSMN8R5-100ESFQ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CHANNEL 100V 97A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V |
Produkt ist nicht verfügbar |
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PSMN8R5-100ESFQ | Hersteller : Nexperia |
MOSFET PSMN8R5-100ESF SOT226/I2PAK |
Produkt ist nicht verfügbar |