Weitere Produktangebote PSMN8R7-80PS,127 nach Preis ab 1.9 EUR bis 42.54 EUR
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PSMN8R7-80PS,127 | Nexperia |
 MOSFET PSMN8R7-80PS/SOT78/SIL3P |
auf Bestellung 3793 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN8R7-80PS,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V |
auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN8R7-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN8R7-80PS,127 |
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Hersteller: Nexperia
MOSFET PSMN8R7-80PS/SOT78/SIL3P
MOSFET PSMN8R7-80PS/SOT78/SIL3P
auf Bestellung 3793 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.27 EUR |
| 10+ | 2.78 EUR |
| 100+ | 2.4 EUR |
| 250+ | 2.39 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 1.93 EUR |
| 2500+ | 1.9 EUR |
| PSMN8R7-80PS,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Description: MOSFET N-CH 80V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 3.55 EUR |
| PSMN8R7-80PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |