| Anzahl | Preis |
|---|---|
| 1+ | 4.65 EUR |
| 10+ | 4.17 EUR |
| 100+ | 3.34 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.27 EUR |
| 2500+ | 2.13 EUR |
| 5000+ | 2.04 EUR |
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Technische Details PSMN9R5-100PS,127 Nexperia
Description: MOSFET N-CH 100V 89A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V.
Weitere Produktangebote PSMN9R5-100PS,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN9R5-100PS,127 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 89A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V |
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