| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.44 EUR |
| 10+ | 4.77 EUR |
| 100+ | 3.56 EUR |
| 500+ | 3 EUR |
| 1000+ | 2.76 EUR |
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Technische Details PSMNR51-25YLHX Nexperia
Description: MOSFET N-CH 25V 380A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 380A (Tc), Rds On (Max) @ Id, Vgs: 0.57mOhm @ 25A, 10V, Power Dissipation (Max): 333W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 2mA, Supplier Device Package: LFPAK56; Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 12 V.
Weitere Produktangebote PSMNR51-25YLHX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PSMNR51-25YLHX | Nexperia USA Inc. |
 Description: MOSFET N-CH 25V 380A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 12 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PSMNR51-25YLHX | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 380A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PSMNR51-25YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 380A Pulsed drain current: 2174A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.46mΩ Mounting: SMD Gate charge: 186nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PSMNR51-25YLHX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 380A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 12 V
Description: MOSFET N-CH 25V 380A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 12 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PSMNR51-25YLHX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 380A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 12 V
Description: MOSFET N-CH 25V 380A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMNR51-25YLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 380A
Pulsed drain current: 2174A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 380A
Pulsed drain current: 2174A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH