| Anzahl | Preis |
|---|---|
| 1500+ | 2.25 EUR |
| 3000+ | 2.24 EUR |
| 9000+ | 2.22 EUR |
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Technische Details PSMNR58-30YLHX Nexperia
Description: MOSFET N-CH 30V 300A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 2mA, Power Dissipation (Max): 333W (Tc), Rds On (Max) @ Id, Vgs: 0.67mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 380A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMNR58-30YLHX nach Preis ab 6.49 EUR bis 6.49 EUR
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PSMNR58-30YLHX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 300A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 2mA Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 380A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMNR58-30YLHX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 2mA Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 380A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| PSMNR58-30YLHX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 347A; Idm: 1960A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 347A Pulsed drain current: 1960A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |