PSMNR60-25YLHX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 25V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 25A, 10V
Power Dissipation (Max): 268W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8117 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 3.22 EUR |
| 3000+ | 3.06 EUR |
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Technische Details PSMNR60-25YLHX Nexperia USA Inc.
Description: MOSFET N-CH 25V 300A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 25A, 10V, Power Dissipation (Max): 268W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 2mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8117 pF @ 12 V.
Weitere Produktangebote PSMNR60-25YLHX nach Preis ab 2.7 EUR bis 6.81 EUR
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PSMNR60-25YLHX | Hersteller : Nexperia |
MOSFET PSMNR60-25YLH/SOT669/LFPAK |
auf Bestellung 6062 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMNR60-25YLHX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 300A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 25A, 10V Power Dissipation (Max): 268W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8117 pF @ 12 V |
auf Bestellung 4383 Stücke: Lieferzeit 21-28 Tag (e) |
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Trans MOSFET N-CH 25V 300A 5-Pin(4+Tab) LFPAK T/R |
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| PSMNR60-25YLHX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 300A; Idm: 1758A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 300A Pulsed drain current: 1758A Power dissipation: 268W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.82mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| PSMNR60-25YLHX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 300A; Idm: 1758A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 300A Pulsed drain current: 1758A Power dissipation: 268W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.82mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhanced |
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