auf Bestellung 4782 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 80+ | 6.85 EUR |
| 100+ | 6.27 EUR |
| 500+ | 5.73 EUR |
| 1000+ | 5.2 EUR |
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Technische Details PSMNR90-40SSHJ Nexperia
Description: MOSFET N-CH 40V 375A LFPAK88, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 375A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V.
Weitere Produktangebote PSMNR90-40SSHJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMNR90-40SSHJ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMNR90-40SSHJ | Hersteller : Nexperia |
MOSFET 40V N-CHANNEL AMPS CONTX |
auf Bestellung 4864 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMNR90-40SSHJ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88 Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V |
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