auf Bestellung 1760 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 3.64 EUR |
| 18+ | 3.04 EUR |
| 100+ | 2.42 EUR |
| 250+ | 2.24 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.74 EUR |
| 3000+ | 1.65 EUR |
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Technische Details PSMNR90-40YSNX Nexperia
Description: PSMNR90-40YSN/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320A (Ta), Rds On (Max) @ Id, Vgs: 0.97mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 268W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10622 pF @ 25 V.
Weitere Produktangebote PSMNR90-40YSNX nach Preis ab 1.16 EUR bis 2.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| PSMNR90-40YSNX | Hersteller : Nexperia USA Inc. |
Description: PSMNR90-40YSN/SOT669/LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320A (Ta) Rds On (Max) @ Id, Vgs: 0.97mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 268W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10622 pF @ 25 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMNR90-40YSNX | Hersteller : Nexperia USA Inc. |
Description: PSMNR90-40YSN/SOT669/LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320A (Ta) Rds On (Max) @ Id, Vgs: 0.97mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 268W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10622 pF @ 25 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMNR90-40YSNX | Hersteller : Nexperia |
 1mOhm, Standard Level MOSFET |
Produkt ist nicht verfügbar |
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PSMNR90-40YSNX | Hersteller : Nexperia |
1mOhm, Standard Level MOSFET |
Produkt ist nicht verfügbar |