PSMP032N08NS1_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 80V/ 3.4MOHM / TJMAX 175C MV MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.05 EUR |
| 10+ | 3.25 EUR |
| 50+ | 2.48 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.78 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5 Stücke
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Technische Details PSMP032N08NS1_T0_00601 Panjit International Inc.
Description: 80V/ 3.4MOHM / TJMAX 175C MV MOS, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 166A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V.
Weitere Produktangebote PSMP032N08NS1_T0_00601
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PSMP032N08NS1_T0_00601 | Panjit |
MOSFETs 80V 3.4mohm Tjmax 175C MV MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PSMP032N08NS1_T0_00601 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 166A; 156W; DFN5060-8 Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 On-state resistance: 3.4mΩ Mounting: SMD Pulsed drain current: 166A Power dissipation: 156W Gate charge: 76nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PSMP032N08NS1_T0_00601 |
|
Hersteller: Panjit
MOSFETs 80V 3.4mohm Tjmax 175C MV MOSFET
MOSFETs 80V 3.4mohm Tjmax 175C MV MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PSMP032N08NS1_T0_00601 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 166A; 156W; DFN5060-8
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
On-state resistance: 3.4mΩ
Mounting: SMD
Pulsed drain current: 166A
Power dissipation: 156W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 166A; 156W; DFN5060-8
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
On-state resistance: 3.4mΩ
Mounting: SMD
Pulsed drain current: 166A
Power dissipation: 156W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH