auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 2.34 EUR |
| 100+ | 2.13 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.69 EUR |
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Technische Details PSMP032N08NS1_T0_00601 Panjit
Description: 80V/ 3.4MOHM / TJMAX 175C MV MOS, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 166A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V.
Weitere Produktangebote PSMP032N08NS1_T0_00601 nach Preis ab 1.74 EUR bis 4.45 EUR
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PSMP032N08NS1_T0_00601 | Hersteller : Panjit International Inc. |
 Description: 80V/ 3.4MOHM / TJMAX 175C MV MOSPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V |
auf Bestellung 1966 Stücke: Lieferzeit 10-14 Tag (e) |
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