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PSMP075N15NS1-T0 Panjit



Hersteller: Panjit
MOSFET TO-220AB-L/MOS/NFET-150CTMNH
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Technische Details PSMP075N15NS1-T0 Panjit

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 125A, Pulsed drain current: 350A, Power dissipation: 258.6W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 9mΩ, Mounting: THT, Gate charge: 97nC, Kind of package: tube, Kind of channel: enhancement.

Weitere Produktangebote PSMP075N15NS1-T0

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PSMP075N15NS1_T0_00601 PSMP075N15NS1_T0_00601 PanJit Semiconductor PSMP075N15NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 125A
Pulsed drain current: 350A
Power dissipation: 258.6W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP075N15NS1_T0_00601 PSMP075N15NS1.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 125A
Pulsed drain current: 350A
Power dissipation: 258.6W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH