PSMQC060N06LS1-AU_R2_006A1 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 60V/ 6M / AECQ101 QUALIFIED / SO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2057 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.89 EUR |
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Technische Details PSMQC060N06LS1-AU_R2_006A1 Panjit International Inc.
Description: 60V/ 6M / AECQ101 QUALIFIED / SO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DFN5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2057 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PSMQC060N06LS1-AU_R2_006A1 nach Preis ab 0.92 EUR bis 2.96 EUR
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PSMQC060N06LS1-AU_R2_006A1 | Hersteller : Panjit International Inc. |
Description: 60V/ 6M / AECQ101 QUALIFIED / SO Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DFN5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2057 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5455 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMQC060N06LS1-AU_R2_006A1 | Hersteller : Panjit |
MOSFETs 60V 6m ohms AECQ101 qualified Solution for Automotive lighting |
auf Bestellung 5750 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMQC060N06LS1-AU_R2_006A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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