| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.15 EUR |
| 10+ | 13.01 EUR |
| 120+ | 10.81 EUR |
| 510+ | 9.01 EUR |
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Technische Details PTGH7565S1_T0_00201 Panjit
Category: THT IGBT transistors, Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 80A, Power dissipation: 183W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 225A, Mounting: THT, Gate charge: 108nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Technology: Trench FS IGBT.
Weitere Produktangebote PTGH7565S1_T0_00201
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| PTGH7565S1_T0_00201 | PanJit Semiconductor |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 183W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 108nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Trench FS IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PTGH7565S1_T0_00201 |
Hersteller: PanJit Semiconductor
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Trench FS IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Trench FS IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH