| Anzahl | Preis |
|---|---|
| 1+ | 14.41 EUR |
| 10+ | 10.93 EUR |
| 120+ | 9.08 EUR |
| 510+ | 7.57 EUR |
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Technische Details PTGH7565S1_T0_00201 Panjit
Category: THT IGBT transistors, Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3, Technology: Trench FS IGBT, Mounting: THT, Case: TO247-3, Kind of package: tube, Collector current: 80A, Gate-emitter voltage: ±20V, Power dissipation: 183W, Pulsed collector current: 225A, Collector-emitter voltage: 650V, Type of transistor: IGBT, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 108nC.
Weitere Produktangebote PTGH7565S1_T0_00201
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PTGH7565S1_T0_00201 | Hersteller : PanJit Semiconductor |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3 Technology: Trench FS IGBT Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 80A Gate-emitter voltage: ±20V Power dissipation: 183W Pulsed collector current: 225A Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 108nC |
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