PU1DLSH Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: DIODE STANDARD 200V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.12 EUR |
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Technische Details PU1DLSH Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD123HE, Packaging: Tape & Reel (TR), Package / Case: SOD-123H, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 19pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123HE, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.
Weitere Produktangebote PU1DLSH nach Preis ab 0.16 EUR bis 0.79 EUR
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Description: DIODE STANDARD 200V 1A SOD123HE Packaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 19pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
auf Bestellung 105872 Stücke: Lieferzeit 10-14 Tag (e) |
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