PU2BLSH Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 0.60 EUR |
| 38+ | 0.47 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.18 EUR |
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Technische Details PU2BLSH Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD123HE, Packaging: Tape & Reel (TR), Package / Case: SOD-123H, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 31pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-123HE, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Qualification: AEC-Q101.
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PU2BLSH | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 2A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 31pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |