PU2DLSH Taiwan Semiconductor


PU2BLSH SERIES_B2109.pdf
Hersteller: Taiwan Semiconductor
Rectifiers 25ns, 2A, 200V, Ultra Fast Recovery Rectifier
auf Bestellung 19250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.7 EUR
10+0.46 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.2 EUR
5000+0.18 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PU2DLSH Taiwan Semiconductor

Description: DIODE STANDARD 200V 2A SOD123HE, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 2 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOD-123HE, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 31pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123H, Packaging: Tape & Reel (TR).

Weitere Produktangebote PU2DLSH

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PU2DLSH PU2DLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PU2DLSH PU2DLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PU2DLSH PU2BLSH SERIES_B2109.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PU2DLSH PU2BLSH SERIES_B2109.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH