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PUMD12-QF

PUMD12-QF Nexperia


PUMD12_Q-2939018.pdf Hersteller: Nexperia
Digital Transistors PUMD12-Q/SOT363/SC-88
auf Bestellung 13755 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
75+0.7 EUR
89+ 0.59 EUR
167+ 0.31 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
2500+ 0.11 EUR
10000+ 0.091 EUR
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Technische Details PUMD12-QF Nexperia

Description: PUMD12-Q/SOT363/SC-88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Frequency - Transition: 230MHz, 180MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PUMD12-QF

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PUMD12-QF PUMD12-QF Hersteller : Nexperia pumd12-q.pdf Trans Digital BJT NPN/PNP 50V 100mA 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
Produkt ist nicht verfügbar
PUMD12-QF Hersteller : NEXPERIA pumd12-q.pdf Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin TSSOP T/R
Produkt ist nicht verfügbar
PUMD12-QF PUMD12-QF Hersteller : NEXPERIA PUMD12-Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PUMD12-QF PUMD12-QF Hersteller : Nexperia USA Inc. PUMD12-Q.pdf Description: PUMD12-Q/SOT363/SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PUMD12-QF PUMD12-QF Hersteller : NEXPERIA PUMD12-Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar