PUMD9-QF Nexperia
Hersteller: NexperiaDigital Transistors 50 V, 100 mA NPN/PNP resistor-equipped double transistor;R1 = 10 kohm, R2 = 47 kohm
auf Bestellung 8854 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 0.38 EUR |
| 12+ | 0.26 EUR |
| 100+ | 0.16 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.072 EUR |
| 2500+ | 0.063 EUR |
| 5000+ | 0.056 EUR |
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Technische Details PUMD9-QF Nexperia
Description: PUMD9-Q/SOT363/SC-88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Frequency - Transition: 230MHz, 180MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: 6-TSSOP, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
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PUMD9-QF | Hersteller : Nexperia |
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PUMD9-QF | Hersteller : Nexperia USA Inc. |
Description: PUMD9-Q/SOT363/SC-88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 230MHz, 180MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |