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PUMH9,125

PUMH9,125 Nexperia

PUMH9.pdf
Hersteller: Nexperia
Digital Transistors SOT363 50V .1A NPN/NPN RET
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.36 EUR
13+0.22 EUR
100+0.14 EUR
500+0.086 EUR
1000+0.072 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PUMH9,125 Nexperia

Description: TRANS PREBIAS 2NPN 50V 6TSSOP, Part Status: Active, Supplier Device Package: 6-TSSOP, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 10kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

Weitere Produktangebote PUMH9,125 nach Preis ab 0.098 EUR bis 0.4 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PUMH9,125 PUMH9,125 Hersteller : Nexperia USA Inc. PUMH9.pdf Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
72+0.24 EUR
117+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
PUMH9,125 PUMH9,125 Hersteller : Nexperia USA Inc. PUMH9.pdf Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH