PX2500Y DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 2kV; 25A; Ammo Pack; Ifsm: 500A; P600; 1.5us
Mounting: THT
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Leakage current: 10µA
Max. forward voltage: 1.1V
Load current: 25A
Max. load current: 100A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 2kV
Kind of package: Ammo Pack
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 94+ | 0.9 EUR |
| 107+ | 0.8 EUR |
| 119+ | 0.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PX2500Y DIOTEC SEMICONDUCTOR
Description: DIODE GEN PURP 1600V 25A P600, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 25A, Supplier Device Package: P600, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A, Current - Reverse Leakage @ Vr: 10 µA @ 1600 V.
Weitere Produktangebote PX2500Y
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PX2500Y | Diotec Semiconductor |
Description: DIODE GEN PURP 1600V 25A P600 Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PX2500Y |
|
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 1600V 25A P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1600V 25A P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH