| Anzahl | Preis |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.38 EUR |
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Technische Details PXP011-20QXJ Nexperia
Description: PXP011-20QX/SOT8002/MLPAK33, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PXP011-20QXJ nach Preis ab 0.43 EUR bis 0.92 EUR
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PXP011-20QXJ | Nexperia USA Inc. |
Description: PXP011-20QX/SOT8002/MLPAK33 Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 5875 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PXP011-20QXJ |
Hersteller: Nexperia USA Inc.
Description: PXP011-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: PXP011-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5875 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 28+ | 0.64 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.5 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.43 EUR |

