QS5U23TR ROHM SEMICONDUCTOR

Category: SMD P channel transistors, Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A, Type of transistor: P-MOSFET + Schottky, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -1.5A, Pulsed drain current: -6A, Power dissipation: 1.25W, Case: TSOT25, Gate-source voltage: ±12V, On-state resistance: 0.34Ω, Mounting: SMD, Gate charge: 4.2nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.