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QS5U36TR

QS5U36TR Rohm Semiconductor

datasheet?p=QS5U36&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TSMT5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 81mOhm @ 2.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT5
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
100+ 0.71 EUR
Mindestbestellmenge: 19
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Technische Details QS5U36TR Rohm Semiconductor

Description: MOSFET N-CH 20V 2.5A TSMT5, Packaging: Tape & Reel (TR), Package / Case: SOT-23-5 Thin, TSOT-23-5, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 81mOhm @ 2.5A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: TSMT5, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V.

Weitere Produktangebote QS5U36TR nach Preis ab 0.67 EUR bis 1.33 EUR

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QS5U36TR QS5U36TR Hersteller : ROHM Semiconductor qs5u36tr-e-1872975.pdf MOSFET N Chan20V2.5A Load Switching
auf Bestellung 3903 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
40+1.33 EUR
46+ 1.14 EUR
100+ 0.86 EUR
500+ 0.67 EUR
Mindestbestellmenge: 40
QS5U36TR QS5U36TR Hersteller : Rohm Semiconductor datasheet?p=QS5U36&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 2.5A TSMT5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 81mOhm @ 2.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT5
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
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