QS5U36TR Rohm Semiconductor

Description: MOSFET N-CH 20V 2.5A TSMT5, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: TSMT5, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Power Dissipation (Max): 1.25W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 81mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-5 Thin, TSOT-23-5, Packaging: Tape & Reel (TR).