QS8M12TCR Rohm Semiconductor

Description: MOSFET N/P-CH 30V 4A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V, Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Not For New Designs.