QSD-10HCS500U Quest Semi
Hersteller: Quest SemiDescription: DIODE SIL CARB 5000V 10A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 69.63 EUR |
| 10+ | 60.35 EUR |
| 100+ | 55.71 EUR |
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Technische Details QSD-10HCS500U Quest Semi
Description: 5000v 10amp Homogeneous SiC Scho, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 3880pF @ 0V, 1MHz, Current - Average Rectified (Io): 66A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 5000 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A, Current - Reverse Leakage @ Vr: 600 µA @ 5000 V.
Weitere Produktangebote QSD-10HCS500U nach Preis ab 134.37 EUR bis 189.69 EUR
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QSD10HCS500U | Hersteller : Quest Semi |
Description: 5000v 10amp Homogeneous SiC Scho Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3880pF @ 0V, 1MHz Current - Average Rectified (Io): 66A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 5000 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 5000 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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