QSD-10HCS500U Quest Semi
Hersteller: Quest Semi
Description: DIODE SIL CARB 5000V 10A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 82.86 EUR |
| 10+ | 71.82 EUR |
| 100+ | 66.29 EUR |
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Technische Details QSD-10HCS500U Quest Semi
Description: 5000v 10amp Homogeneous SiC Scho, Current - Average Rectified (Io): 66A, Capacitance @ Vr, F: 3880pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 600 µA @ 5000 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 5000 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2.
Weitere Produktangebote QSD-10HCS500U nach Preis ab 159.9 EUR bis 225.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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QSD10HCS500U | Quest Semi |
Description: 5000v 10amp Homogeneous SiC Scho Current - Average Rectified (Io): 66A Capacitance @ Vr, F: 3880pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 600 µA @ 5000 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A Voltage - DC Reverse (Vr) (Max): 5000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| QSD10HCS500U |
|
Hersteller: Quest Semi
Description: 5000v 10amp Homogeneous SiC Scho
Current - Average Rectified (Io): 66A
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 5000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Description: 5000v 10amp Homogeneous SiC Scho
Current - Average Rectified (Io): 66A
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 5000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 225.73 EUR |
| 10+ | 206.93 EUR |
| 100+ | 178.71 EUR |
| 500+ | 159.9 EUR |