R1LV3216RSD-7SI#S0 Renesas Electronics America Inc
Hersteller: Renesas Electronics America IncDescription: IC SRAM 32MBIT PAR 52TSOP II
Packaging: Bulk
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 4220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 129.73 EUR |
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Technische Details R1LV3216RSD-7SI#S0 Renesas Electronics America Inc
Description: IC SRAM 32MBIT PAR 52TSOP II, Packaging: Tape & Reel (TR), Package / Case: 52-TFSOP (0.350", 8.89mm Width), Mounting Type: Surface Mount, Memory Size: 32Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM, Memory Format: SRAM, Supplier Device Package: 52-TSOP II, Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 4M x 8, 2M x 16, DigiKey Programmable: Not Verified.
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R1LV3216RSD-7SI#S0 | Hersteller : Renesas Electronics America Inc |
Description: IC SRAM 32MBIT PAR 52TSOP II Packaging: Tape & Reel (TR) Package / Case: 52-TFSOP (0.350", 8.89mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 52-TSOP II Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 4M x 8, 2M x 16 DigiKey Programmable: Not Verified |
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