R1WV6416RBG-7SI#B0 Renesas Electronics America Inc
Hersteller: Renesas Electronics America Inc
Description: IC SRAM 64MBIT PARALLEL 48TFBGA
Memory Organization: 4M x 16, 8M x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Active
Supplier Device Package: 48-TFBGA (8.5x11)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Bulk
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Technische Details R1WV6416RBG-7SI#B0 Renesas Electronics America Inc
Description: IC SRAM 64MBIT PARALLEL 48TFBGA, Memory Organization: 4M x 16, 8M x 8, Access Time: 70 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 70ns, Part Status: Active, Supplier Device Package: 48-TFBGA (8.5x11), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 64Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| R1WV6416RBG-7SI#B0 | Renesas |
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