R2N2907A Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Produktrezensionen
Produktbewertung abgeben
Technische Details R2N2907A Microchip Technology
Description: RH SMALL-SIGNAL BJT, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 600 mA, Part Status: Active, Supplier Device Package: TO-18 (TO-206AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 50nA.
Weitere Produktangebote R2N2907A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| R2N2907A | Microchip Technology | Bipolar Transistors - BJT 60V 600mA 500mW PNP RH Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| R2N2907A |
Hersteller: Microchip Technology
Bipolar Transistors - BJT 60V 600mA 500mW PNP RH Small-Signal BJT THT
Bipolar Transistors - BJT 60V 600mA 500mW PNP RH Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
