R5011ANJTL Rohm Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 2.21 EUR |
| 100+ | 2.03 EUR |
| 250+ | 1.88 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.62 EUR |
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Technische Details R5011ANJTL Rohm Semiconductor
Description: MOSFET N-CH 500V 11A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: LPTS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V.
Weitere Produktangebote R5011ANJTL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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R5011ANJTL | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH Si 500V 11A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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R5011ANJTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 500V 11A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
Produkt ist nicht verfügbar |
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R5011ANJTL | Hersteller : ROHM Semiconductor |
MOSFET TRANS MOSFET NCH 500V 11A 3PIN |
Produkt ist nicht verfügbar |