Technische Details R5011ANX Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO220FM, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote R5011ANX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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R5011ANX | Rohm Semiconductor |
 Description: MOSFET N-CH 500V 11A TO220FMPackage / Case: TO-220-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
R5011ANX | ROHM Semiconductor |
 MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| R5011ANX |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO220FM
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 500V 11A TO220FM
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| R5011ANX |
|
Hersteller: ROHM Semiconductor
MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH