
R5207ANDTL Rohm Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
125+ | 1.18 EUR |
250+ | 1.10 EUR |
500+ | 1.02 EUR |
1000+ | 0.95 EUR |
2500+ | 0.88 EUR |
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Technische Details R5207ANDTL Rohm Semiconductor
Description: MOSFET N-CH 525V 7A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: CPT3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 525 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
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R5207ANDTL |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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R5207ANDTL | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
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R5207ANDTL | Hersteller : ROHM Semiconductor |
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Produkt ist nicht verfügbar |