R5207ANDTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 125+ | 1.39 EUR |
| 250+ | 1.32 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.18 EUR |
| 2500+ | 1.12 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
125 Stücke
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Technische Details R5207ANDTL Rohm Semiconductor
Description: MOSFET N-CH 525V 7A CPT3, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 525 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: CPT3, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote R5207ANDTL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
R5207ANDTL | Rohm Semiconductor |
 Description: MOSFET N-CH 525V 7A CPT3Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 525 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: CPT3 Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
R5207ANDTL | ROHM Semiconductor |
MOSFETs LO CURR HI EFF MOSFT HI BREAKDWN RESIST |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| R5207ANDTL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 525V 7A CPT3
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N-CH 525V 7A CPT3
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| R5207ANDTL |
|
Hersteller: ROHM Semiconductor
MOSFETs LO CURR HI EFF MOSFT HI BREAKDWN RESIST
MOSFETs LO CURR HI EFF MOSFT HI BREAKDWN RESIST
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH