R6006ANX Rohm Semiconductor
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 2.45 EUR |
| 100+ | 2.25 EUR |
| 250+ | 2.08 EUR |
| 500+ | 1.93 EUR |
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Technische Details R6006ANX Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V.
Weitere Produktangebote R6006ANX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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R6006ANX | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220FM Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6006ANX | Hersteller : ROHM Semiconductor |
MOSFET 10V DRIVE NCH MOSFET |
Produkt ist nicht verfügbar |