R6007JND3TL1 ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET R6007JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.01 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.99 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.43 EUR |
| 2500+ | 1.36 EUR |
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Technische Details R6007JND3TL1 ROHM Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252, Type of transistor: N-MOSFET, Mounting: SMD, Case: TO252, On-state resistance: 780mΩ, Kind of package: reel; tape, Power dissipation: 96W, Polarisation: unipolar, Gate charge: 17.5nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 21A, Drain-source voltage: 600V, Drain current: 7A, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote R6007JND3TL1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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R6007JND3TL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6007JND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252 Type of transistor: N-MOSFET Mounting: SMD Case: TO252 On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| R6007JND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252 Type of transistor: N-MOSFET Mounting: SMD Case: TO252 On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A |
Produkt ist nicht verfügbar |