
R6015ANJTL Rohm Semiconductor
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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48+ | 3.10 EUR |
50+ | 2.87 EUR |
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Technische Details R6015ANJTL Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: LPTS, Part Status: Not For New Designs, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V.
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R6015ANJTL | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6015ANJTL | Hersteller : ROHM Semiconductor |
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Produkt ist nicht verfügbar |