R6015ANX Rohm Semiconductor
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 6.48 EUR |
| 26+ | 5.98 EUR |
| 50+ | 5.54 EUR |
| 100+ | 5.14 EUR |
| 250+ | 4.79 EUR |
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Technische Details R6015ANX Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V, Power Dissipation (Max): 77W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V.
Weitere Produktangebote R6015ANX nach Preis ab 6.59 EUR bis 9.7 EUR
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R6015ANX | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 15A TO220FMPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220FM Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
auf Bestellung 178 Stücke: Lieferzeit 10-14 Tag (e) |
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R6015ANX Produktcode: 105991 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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R6015ANX | Hersteller : ROHM Semiconductor |
MOSFET RECOMMENDED ALT 755-R6015KNX |
Produkt ist nicht verfügbar |