R6020ANZC8 Rohm Semiconductor
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 6.52 EUR |
| 26+ | 6.01 EUR |
| 50+ | 5.57 EUR |
| 100+ | 5.18 EUR |
| 250+ | 4.82 EUR |
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Technische Details R6020ANZC8 Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4.15V @ 1mA, Supplier Device Package: TO-3PF, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V.
Weitere Produktangebote R6020ANZC8
| Foto | Bezeichnung | Hersteller | Beschreibung |
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R6020ANZC8 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-3PF Bulk |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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R6020ANZC8 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.15V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6020ANZC8 | Hersteller : ROHM Semiconductor |
MOSFET 10V Drive Nch MOSFET |
Produkt ist nicht verfügbar |