R6020ENZC17 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.25 EUR |
| 50+ | 5.02 EUR |
| 100+ | 4.36 EUR |
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Technische Details R6020ENZC17 Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.
Weitere Produktangebote R6020ENZC17 nach Preis ab 4.55 EUR bis 11.29 EUR
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R6020ENZC17 | Rohm Semiconductor |
 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube |
auf Bestellung 224 Stücke: Lieferzeit 14-21 Tag (e) |
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R6020ENZC17 | ROHM Semiconductor |
MOSFETs 600V 20A TO-3PF, Low-noise Power MOSFET |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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R6020ENZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PF Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6020ENZC17 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 9.31 EUR |
| 32+ | 5.36 EUR |
| 33+ | 5.14 EUR |
| 100+ | 4.55 EUR |
| R6020ENZC17 |
|
Hersteller: ROHM Semiconductor
MOSFETs 600V 20A TO-3PF, Low-noise Power MOSFET
MOSFETs 600V 20A TO-3PF, Low-noise Power MOSFET
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.02 EUR |
| 25+ | 6.34 EUR |
| 100+ | 5.74 EUR |
| R6020ENZC17 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.29 EUR |
| 30+ | 6.13 EUR |
| 120+ | 5.7 EUR |