R6020ENZC8 Rohm Semiconductor

Description: MOSFET N-CH 600V 20A TO3PF, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 4V @ 1mA.