R6020FNJTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 39+ | 4.55 EUR |
| 50+ | 4.31 EUR |
| 100+ | 4.07 EUR |
| 250+ | 3.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6020FNJTL Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 304W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote R6020FNJTL nach Preis ab 3.49 EUR bis 13.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
R6020FNJTL | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 20A LPTInput Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 304W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
R6020FNJTL | ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 600V 20A |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6020FNJTL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.13 EUR |
| 10+ | 5.63 EUR |
| 100+ | 4.14 EUR |
| 500+ | 3.49 EUR |
| R6020FNJTL |
|
Hersteller: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 600V 20A
MOSFETs Transistor MOSFET, Nch 600V 20A
auf Bestellung 971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.28 EUR |
| 10+ | 8.69 EUR |
| 100+ | 6.41 EUR |
| 500+ | 5.7 EUR |